Author | : Vassil Palankovski |
File Size | : 46,7 Mb |
Publisher | : Springer Science & Business Media |
Language | : English |
Release Date | : 06 December 2012 |
ISBN | : 9783709105603 |
Pages | : 309 pages |
Analysis and Simulation of Heterostructure Devices by Vassil Palankovski Book PDF Summary
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.