Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors

This book PDF is perfect for those who love Technology & Engineering genre, written by Evelyn Tina Breyer and published by BoD – Books on Demand which was released on 23 February 2022 with total hardcover pages 213. You could read this book directly on your devices with pdf, epub and kindle format, check detail and related Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors books below.

Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors
Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors
Author : Evelyn Tina Breyer
File Size : 51,7 Mb
Publisher : BoD – Books on Demand
Language : English
Release Date : 23 February 2022
ISBN : 9783755768975
Pages : 213 pages
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Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors by Evelyn Tina Breyer Book PDF Summary

Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).

Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors

Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors by Evelyn Tina Breyer

Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory),

Get Book
Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors

Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors by Evelyn Tina Breyer

Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory),

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Conception Evaluation and Development of the Non volatile Programmable Logic Circuits Using the Magnetic Tunnel Junction MTJ

Conception Evaluation and Development of the Non volatile Programmable Logic Circuits Using the Magnetic Tunnel Junction MTJ by Weisheng Zhao

Over the past 20 years, programmable logic circuits have grown rapidly, particularly through the advantages presented by their reconfigurability, ease of use and low cost of their development process. However, the inherent volatility of CMOS technology based on charge storage is the source of inconvenient for these circuits, such as: data

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Ferroelectric Gate Field Effect Transistor Memories

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